Vol. 48, Issue 3, pp. 499-513

Abstract

In this paper, we will discuss the Goos–Hänchen shifts properties of reflected and transmitted light beams from the cavity with four-level InGaN/GaN quantum dots nanostructure. We find that the Goos–Hänchen shifts properties of reflected and transmitted light beams can be controlled via adjusting the refractive index of four-level quantum dot nanostructure. Here, we show that by tunable infrared laser field the negative refraction index can be possible at certain values of probe frequency. Therefore, the large Goos–Hänchen shifts for reflected and transmitted light beams are possible for negative refractive index condition.