Vol. 33, Issue 4, pp. 661-668

  1. Archive
  2. Optica Applicata Vol. 33, Issue 4, pp. 661-668 (2003)
Vol. 33 Issue 4 pp. 661-668

Structural, optical and electrical characterization of Co-Pd doped TiO2 semiconducting thin films sputtered on silicon

Jaroslaw Domaradzki, Eugeniusz Prociow, Danuta Kaczmarek, Tadeusz Berlicki, Robert Kudrawiec, Jan Misiewicz, Witold Mielcarek

Keywords

thin film, magnetron sputtering, hot target, oxide semiconductors, heterojunction

Abstract

The fundamental structural, electrical and optical properties of junction-based devices composed of semiconducting thin films of metal oxide on a semiconductor were examined. Thin films were deposited on silicon and silica substrates by hot target reactive magnetron sputtering process. During the deposition base TiO2 films were doped with Co, Pd transition metals. Electrical and optical beam induced current (OBIC) analysis confirmed the formation of a junction based on a semiconduting thin film of metal oxide–semiconductor interface.

Vol. 33
Issue 4
pp. 661-668

0.52 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology