Vol. 35, Issue 3, pp. 355-361

  1. Archive
  2. Optica Applicata Vol. 35, Issue 3, pp. 355-361 (2005)
Vol. 35 Issue 3 pp. 355-361

Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces

Marcin MICZEK, Boguslawa ADAMOWICZ, Tamotsu HASHIZUME, Hideki HASEGAWA

Keywords

gallium arsenide, gallium nitride, surface states, bulk traps, photoluminescence, surface photovoltage

Abstract

The influence of surface state density NSS and bulk non-radiative lifetime t on room temperature photoluminescence quantum efficiency YPL and surface photovoltage (SPV) versus the excitation light intensity F was studied theoretically for GaAs and wurtzite GaN using self-consistent computer simulations. It was demonstrated that SPV(F ) dependences are more sensitive than YPL(F ) to a change in magnitude of NSS, especially for high NSS and at low F, whereas SPV is practically insensitive to t contrary to YPL. The simultaneous measurement of YPL and SPV versus F, combined with rigorous computer analysis, seems to be a very promising method for contactless characterization of the surface and bulk trap parameters.

Vol. 35
Issue 3
pp. 355-361

0.34 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology