Vol. 39, Issue 4, pp. 717-722

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  2. Optica Applicata Vol. 39, Issue 4, pp. 717-722 (2009)
Vol. 39 Issue 4 pp. 717-722

Properties of AlNx thin films prepared by DC reactive magnetron sputtering

Andrzej Stafiniak, Donata Muszynska, Adam Szyszka, Bogdan Paszkiewicz, Konrad Ptasinski, Sergiusz Patela, Regina Paszkiewicz, Marek Tlaczala

Keywords

aluminum nitride (AlN), thin films, reactive magnetron sputtering, alternative dielectrics

Abstract

In this paper, the results of investigation of the influence of cathode current on optical and dielectric AlNx thin-film properties are presented. AlNx films were prepared by pulsed DC reactive magnetron sputtering of Al target on substrates at room temperature. For characterization of fabricated test structures C-V spectroscopy, ellipsometry measurement and atomic force microscopy (AFM) were used.

Vol. 39
Issue 4
pp. 717-722

1.17 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology