Vol. 39, Issue 4, pp. 765-772

Vol. 39 Issue 4 pp. 765-772

Cr ohmic contact on an Ar+ ion modified 6H-SiC(0001) surface

Milosz Grodzicki, Jan Chrzanowski, Piotr Mazur, Stefan Zuber, Antoni Ciszewski

Keywords

silicon carbide, chromium, electric contacts, AFM

Abstract

Chromium layers were vapor deposited under ultrahigh vacuum onto samples cut out of a single crystal of 6H-SiC(0001) that were Ar+ bombardment modified. The substrates and electrical contacts formed by the Cr adlayer were characterized in situ by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr/SiC contacts reveal  a good I–V characteristic linearity without the use of heavy impurity doping and high-temperature annealing.

Vol. 39
Issue 4
pp. 765-772

2.81 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology