Vol. 39, Issue 4, pp. 845-852
Keywords
bandgap energy, lattice mismatch, deep level defects, InGaAs heterostructures, deep level transient spectroscopy (DLTS)
Abstract
This paper addresses some physical aspects and presents experimental results concerning to phenomena which evoke modification of band structure in lattice mismatched InGaAs/GaAs heterostructures, namely the introduction of extra deep-lying energy levels in the bandgap. The deep level transient spectroscopy reveals commonly observed deep level defects in GaAs-based structures associated with native point defects as well as misfit dislocations related to strain relaxation processes.