Vol. 39, Issue 4, pp. 967-974
Keywords
photoluminescence spectroscopy, quantum cascade lasers, unipolar devices, semiconductor lasers
Abstract
In this paper, we present the application of photoluminescence spectroscopy as a diagnostic method for evaluation of correctness and homogeneity of AlGaAs/GaAs test superlattices used in the development of quantum cascade laser technology. The structures investigated are used for the growth rate calibration of quantum-cascade-laser structures. The influence of various structural parameters on the observed photoluminescence signal is studied experimentally and theoretically. On the basis of this discussion we analyse spatial uniformity of the epitaxial material over the wafer and diagnose accuracy of the deposition process.