Vol. 41, Issue 2, pp. 281-288

  1. Archive
  2. Optica Applicata Vol. 41, Issue 2, pp. 281-288 (2011)
Vol. 41 Issue 2 pp. 281-288

Characterization of AIIIBV epitaxial layers by scanning spreading resistance microscopy

Adam Szyszka, Beata Sciana, Damian Radziewicz, Wojciech Macherzynski, Bogdan Paszkiewicz, Marek Tlaczala

Keywords

scanning spreading resistance microscopy (SSRM), spreading resistance, GaAs, atomic force microscopy (AFM)

Abstract

One of the electrical characterization techniques of semiconductor structures with nanometer spatial resolution is scanning spreading resistance microscopy (SSRM). The applicability of SSRM technique for characterization of GaAs structures with n-type doping fabricated by metalorganic vapour phase epitaxy (MOVPE) was examined. The influence of scaling effect on the nanometer size AFM tip–semiconductor electrical characteristics was described. The results of characterization of device structure of magnetic field sensitive field effect transistor were presented.

Vol. 41
Issue 2
pp. 281-288

0.41 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology