Vol. 41, Issue 2, pp. 295-305

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  2. Optica Applicata Vol. 41, Issue 2, pp. 295-305 (2011)
Vol. 41 Issue 2 pp. 295-305

Electrical and photoelectric characterization of the MOS structures on 3C–SiC substrate

Krzysztof Piskorski, Henryk M. Przewlocki, Romain Esteve, Mietek Bakowski

Keywords

silicon carbide (SiC), MOS structure, band diagram

Abstract

In this work results are presented of the electrical and photoelectric measurements of MOS capacitors, consisting of an Al gate of thickness 25 nm, SiO2 insulator of thickness 60 nm, and n-doped 3C–SiC. Many different measurement techniques are employed in order to completely define all parameters of the band diagram of the MOS structure, which is the main goal of these investigations.

Vol. 41
Issue 2
pp. 295-305

0.38 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology