Vol. 41, Issue 2, pp. 333-339

Abstract

We report on the performance of planar silicon diodes, operating at a temperature range above 300 K and emitting infrared radiation. The results present a theoretical analysis and experimental verification of an optimization aimed at a maximal difference between emissivity of this structure for cases with and without forward bias applied to p–n junction. Several advantages of the structures were shown: wide emission spectrum (3–12 μm), short rise-fall time (300 μs), high operating temperature (≈ 400 K). Spatial distribution of photonic radiation emitted by a silicon structure obtained by a thermovision camera is compared with computer simulation distribution of carrier concentration. These planar sources can be used as easily controlled sources of infrared radiation in a wide spectral range, image simulators, e.g., dynamic scene simulation devices with frame frequencies well above 200 Hz and for measurements of thermovision camera dynamic parameters.