Vol. 41, Issue 2, pp. 449-454

Abstract

The use of the cyclic method of the deposition of multilayer amorphous and microcrystalline silicon films, based on the knowledge of a phase transient algorithm for silicon in low temperature conditions (below 250 °C), can give a possibility of creating silicon quantum dot structures. The thickness, crystallographic structure, optical gap as well as film and interface roughnesses of the amorphous Si:H and μc-Si:H dot layer on glass and multicrystalline substrate were systematically studied by atomic force microscopy (AFM), small angle X-ray and UV–VIS–IR technique. It was developed on the base of these measurements that there is the phase transition from amorphous a-Si:H to multinanocrystalline Si structure with 4–15 nm crystallites.