Vol. 42, Issue 4, pp. 713-724
Keywords
heavily doped Si, strongly excited Si, dielectric function, Drude–Lorentz approximation, optical model
Abstract
Recently shown photonic and optoelectronic potentialities of Si-based materials and devices require an accurate representation for their optical functions. A predictive model of dielectric function for heavily doped and/or highly excited Si:P is presented. The influence of dopants and of free-carrier population has been calculated independently, allowing the determination of accuracy in usual approximations. The effect of Drude parameters on the heavily doped Si:P optical response is taken into account. All results are supported by experimental data.