Vol. 49, Issue 1, pp. 161-166

Vol. 49 Issue 1 pp. 161-166

Exposition time analysis of AlGaN/GaN HEMT fabrication by electron beam lithography

Kornelia Indykiewicz, Bogdan Paszkiewicz, Regina Paszkiewicz

Keywords

electron beam lithography, device fabrication, exposition time reduction

Abstract

Electron beam lithography, due to the high design flexibility and high pattering resolution can be used as an exclusive lithography method in device fabrication in R&D reality. To achieve the reasonable time of process exposition, some essential steps and actions must be done. In the article, the main technical and technological dependences, based on AlGaN/GaN HEMT transistor fabrication, will be presented and discussed. As a result of conducted studies, the total time of the most important lithography process expositions will be shown and explained.

Vol. 49
Issue 1
Article No: 14
pp. 161-166

0.5 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology