Vol. 50, Issue 4, pp. 663-670

Vol. 50 Issue 4 pp. 663-670

The optical parameters of TiO2 antireflection coating prepared by atomic layer deposition method for photovoltaic application

Marek Szindler, Magdalena M. Szindler


thin film, atomic layer deposition, titanium dioxide


Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO2 thin films. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS).

Vol. 50
Issue 4
Article No: 12
pp. 663-670

0.58 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology