Vol. 10, Issue 1, pp. 51-62 (1980)

Abstract

Contacts on weakly-doped p-type CdTe samples and on moderate-doped n-type Cd_0.175Hg_0.825TE ones were obtained by vacuum evaporation of Au and In. The photovoltage spectral characteristic were measured at the 77-300 K temperature range and the barrier height estimated.