Vol. 10, Issue 4, pp. 435-444

Abstract

In the paper the limiting values of the R0A product have been calculated for diffusion p-n PbTe junctions within the temperature range 77-300 K. The influence of the diffusion current (for the radiative and Auger recombination) and the generation-recombination current upon R₀A is discussed. The calculations have been carried out for optimum doping concentrations, for which the contribution of tunnel current component may he neglected. Also the calculations of R₀A for the Schottky junction are performed. The results of calculations are compared with the experimental data reported by other authors. A satisfactory consistence has been achieved for p-n junctions. An attempt was made to explain the divergences which appear for Schottky junctions. The working conditions for photovoltaic detectors, the detectivity of which is limited by the background radiation, were determined.