Vol. 31, Issue 2, pp. 313-323 (2001)

Abstract

Some design modifications and optimization of the GaAs/(AlGa)As separate-confinement-heterostructure (SCH) as well as graded-index separate-confinement-heterostructure (GRIN-SCH) semiconductor lasers to reduce their room-temperature (RT) thresholds are discussed. To this end, a detailed optical model of arsenide diode lasers is developed and used to compare the impact of some structure details on RT lasing thresholds. In the model presented in the first part of the paper, both optical gain and losses are modeled rigorously. Optical fields within complex multi-layered structures of the SCH lasers are found using the downhill method. Threshold carrier concentrations are determined from the general balance of radiation gain and losses. As a result of the simulation, recommended basic design parameters for the above structures are deduced in the second part of the paper.