Vol. 33, Issue 4, pp. 661-668 (2003)
Keywords
thin film, magnetron sputtering, hot target, oxide semiconductors, heterojunction
Abstract
The fundamental structural, electrical and optical properties of junction-based devices composed of semiconducting thin films of metal oxide on a semiconductor were examined. Thin films were deposited on silicon and silica substrates by hot target reactive magnetron sputtering process. During the deposition base TiO2 films were doped with Co, Pd transition metals. Electrical and optical beam induced current (OBIC) analysis confirmed the formation of a junction based on a semiconduting thin film of metal oxide–semiconductor interface.