Vol. 35, Issue 3, pp. 517-522 (2005)
Keywords
annealing, stress measurements, thin films
Abstract
Stress measurements of 23 nm copper films and 93 nm silver films on Si (100) have been performed during thermal cycling between RT and 450°C. The changes in stress versus temperature are interpreted. The effects of treatment on microstructure and composition are studied by X-ray diffraction.