Vol. 36, Issue 1, pp. 23-28

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  2. Optica Applicata Vol. 36, Issue 1, pp. 23-28 (2006)
Vol. 36 Issue 1 pp. 23-28

GaAs absorber grown at low temperature used in passively Q-switched diode pumped solid state laser

Yonggang Wang, Xiaoyu Ma, CuiLuan Wang, Tao Lin, Kai Zhen, Jun Wang, Li Zhong,YuLei Jia, ZhiYi Wei

Keywords

GaAs, low temperature, Q-switch, Nd:YVO4 laser

Abstract

We report, for the first time to the best of our knowledge, on a passively Q-switched Nd:YVO4 laser with a GaAs absorber grown at low temperature (LT) by metal organic vapor phase expitaxy. Using the LT GaAs absorber as well as an output coupler, a passively Q-switched laser whose pulse duration is as short as 90 ns was obtained.

Vol. 36
Issue 1
pp. 23-28

0.19 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology