Vol. 36, Issue 2-3, pp. 187-192

Abstract

Nd³⁺-doped silicon-rich silicon oxide thin films have been fabricated by reactive magnetron co-sputtering of a pure silica target topped with Nd₂O₃ chips. The incorporation of silicon excess in the films has been controlled by the hydrogen partial pressure P_H2 introduced in the plasma. Photoluminescence experiments have been made at room temperature using a non resonant excitation with Nd³⁺ ions. The influences of Nd³⁺ content and P_H2 have been studied to improve the Nd³⁺ emission. Photoluminescence spectra reveal an enhancement of the Nd³⁺ emission at 0.9 mm and 1.1 mm when silicon nanoclusters and Nd³⁺ are embedded in a SiO₂ matrix.