Vol. 36, Issue 2-3, pp. 373-380 (2006)
Keywords
thin-film transistors, ambipolar, organic materials, amorphous silicon, two-dimensional electronics
Abstract
A model for thin-film field-effect transistors in which the active layer is treated as purely two-dimensional is applied to ambipolar devices that have shown to be light emitting. This results in an adequate description of the electrical characteristics.