Vol. 36, Issue 4, pp. 593-600 (2006)
Keywords
laser-produced plasma extreme ultraviolet (EUV) source, gas puff target, Mo/Si mirrors, EUV spectroscopy
Abstract
In this paper an application of a recently developed laser plasma source of extreme ultraviolet (EUV) for optical measurements of optical characteristics of Mo/Si multilayer mirrors is presented. The source is based on an xenon-helium double-stream gas puff target irradiated with laser pulses from a Nd : YAG laser system (E = 0.55 J, t = 3.9 ns, f = 10 Hz, M 2 = 2.5). The results show that the source can be useful for EUV lithography technologies as a metrology tool in the semiconductor industry.