Vol. 37, Issue 4, pp. 371-376 (2007)

Abstract

Double gallium arsenide quantum wells (2QW) were inserted within Al_xGa_1–xAs barriers of the intrinsic layer of an ordinary solar cell. Structure parameters have strong influence on device performance and should be precisely controlled in order to obtain the enhancement of conversion efficiency. Computer simulations of solar cells were carried out by SimWindows program v. 1.5.0. Some parameters of optimized quantum well solar cells (QWSC) and reference p-i-n solar cell structures, like: series resistance R_s, shunt resistance R_sh, emission coefficients (n₁ and n₂), diffusion and recombination components of current (J_d and J_r) were compared.