Vol. 38, Issue 3, pp. 575-583 (2008)

Vol. 38 Issue 3 pp. 575-583

Distribution of electronic states in amorphous Zn-P thin films on the basis of optical measurements

Bozena Jarzabek, Jan Weszka, Jan Cisowski

Keywords

amorphous semiconductors, thin films, absorption coefficient, model of electronic structure

Abstract

Transmission and fundamental reflectivity studies, completed on amorphous Zn-P thin films, allowed us to obtain parameters describing the fundamental absorption edge, i.e., the optical pseudogap EG, Urbach energy EU and exponential edge parameter ET. All these data, together with the results of earlier transport measurements, have been utilized in developing simple models of electronic structure (distribution of electronic states) for amorphous Zn-P thin films of two compositions, i.e., Zn57P43 (near stoichiometry of Zn3P2) and Zn32P68 (near stoichiometry of ZnP2).

Vol. 38
Issue 3
pp. 575-583

0.15 MB

Corresponding address

Optica Applicata
Wrocław University of Science and Technology
Faculty of Fundamental Problems of Technology
Wybrzeże Wyspiańskiego 27
50-370 Wrocław, Poland

Publisher

Wrocław University of Science and Technology
Faculty of Fundamental Problems of Technology
Wybrzeże Wyspiańskiego 27
50-370 Wrocław, Poland

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