Vol. 40, Issue 4, pp. 935-941

Abstract

Green silicon photodetector is successfully developed on the substrate of n-type single-crystal (100) silicon. To improve its performance, the detector is optimized by optimizing the p-n junction depth x_j and the thickness of antireflection layer to reduce dark current, shorten response time and increase sensitivity. The spectrum response SNR can be over 10⁴ within the wavelength range of 500–600 nm and the peak of spectral responsivity is 0.48 A/W at about 520 nm. The temperature characteristics of the dark current at reverse bias and photocurrent at zero bias are emphatically investigated. Firstly, the temperature behavior of dark current at 10 V reverse bias voltage and temperature range of 253–323 K is studied. Results show that dark current is dominated by generation-recombination current I_gr the temperature range of 253–283 K and it is dominated by traps tunneling current I_tt at the temperature range of 283–323 K. Secondly, the temperature behavior of photocurrent at zero bias and temperature range of  213–353 K is discussed. Results show that photocurrent increases as temperature increases below room temperature and almost holds the line over room temperature. Consequently, photodetector fulfils quality requirements.