Vol. 41, Issue 2, pp. 281-288 (2011)
Keywords
scanning spreading resistance microscopy (SSRM), spreading resistance, GaAs, atomic force microscopy (AFM)
Abstract
One of the electrical characterization techniques of semiconductor structures with nanometer spatial resolution is scanning spreading resistance microscopy (SSRM). The applicability of SSRM technique for characterization of GaAs structures with n-type doping fabricated by metalorganic vapour phase epitaxy (MOVPE) was examined. The influence of scaling effect on the nanometer size AFM tip–semiconductor electrical characteristics was described. The results of characterization of device structure of magnetic field sensitive field effect transistor were presented.