Vol. 41, Issue 2, pp. 295-305 (2011)

Abstract

In this work results are presented of the electrical and photoelectric measurements of MOS capacitors, consisting of an Al gate of thickness 25 nm, SiO₂ insulator of thickness 60 nm, and n-doped 3C–SiC. Many different measurement techniques are employed in order to completely define all parameters of the band diagram of the MOS structure, which is the main goal of these investigations.