Vol. 43, Issue 1, pp. 27-33 (2013)

Vol. 43 Issue 1 pp. 27-33

Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures

Jacek Gryglewicz, Andrzej Stafiniak, Mateusz Wosko, Joanna Prazmowska, Bogdan Paszkiewicz

Keywords

reactive ione etching, HEMT, AlGaN/GaN heterostructure

Abstract

In this study, the results of reactive ion etching (RIE) process of diversified Al content AlxGa1–xN/AlN/GaN/sapphire heterostructures were presented. The Al fractions of 22, 25, 31 and 36% were examined. An impact of Al content in the heterostructures on the etch rates and surface morphology was investigated. The influence of used Cl2/BCl3/Ar gas mixture with varying of BCl3 flow on the etch rate of Al0.2Ga0.8N/GaN/sapphire, surface morphology and angle of mesa slope, was discussed.

Vol. 43
Issue 1
pp. 27-33

0.93 MB

Corresponding address

Optica Applicata
Wrocław University of Science and Technology
Faculty of Fundamental Problems of Technology
Wybrzeże Wyspiańskiego 27
50-370 Wrocław, Poland

Publisher

Wrocław University of Science and Technology
Faculty of Fundamental Problems of Technology
Wybrzeże Wyspiańskiego 27
50-370 Wrocław, Poland

Contact us

  • optica.applicata@pwr.edu.pl
  • +48 71 320 23 93
  • +48 71 328 36 96