Vol. 43, Issue 2, pp. 325-341
Keywords
vertical-external-cavity surface-emitting laser (VECSEL), semiconductor disk laser (SDL), 1.3 μm, thermal management, simulation, modelling
Abstract
In the present paper, thermal properties of arsenide and phosphide optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) emitting the 1.3-μm radiation have been compared with the aid of the self-consistent finite-element method. Both monolithic VECSEL structures as well as VECSELs manufactured using the wafer fusing to combine phosphide layers with arsenide mirrors have been examined. The main goal of the paper is to discuss thermal VECSEL properties and to find an optimal material system characterized by the best thermal parameters enabling producing efficient VECSELs emitting radiation of the second telecom window (1.3 μm). In most cases, arsenide VECSELs have been found to exhibit lower thermal resistances than the phosphide ones. Besides, as expected, the most efficient heat-sinking has been determined for heat spreaders made of high thermal-conductivity materials. However, a final choice of an optimal VECSEL structure emitting the 1.3-μm radiation is still under question.