Vol. 43, Issue 4, pp. 663-677

Vol. 43 Issue 4 pp. 663-677

The effect of fluorine and tungsten co-doping on optical, electrical and structural properties of tin (IV) oxide thin films prepared by sol–gel spin coating method

Eyup Fahri Keskenler, Guven Turgut, Serdar Aydin, Seydi Dogan, Bahattin Duzgun

Keywords

tin (IV) oxide (SnO2), fluorine (F) and tungsten (W) co-doping, sol–gel

Abstract

Fluorine and tungsten co-doped tin (IV) oxide (WFTO) thin films have been prepared first time by a sol–gel spin coating method. The effect of F and W co-dopant ratio on optical, electrical and structural properties of SnO2 was investigated. It was found that the optical properties of the films were obviously affected by the co-dopant ratio. When the F:W co-dopant ratio increases from 0.25:0.25 to 0.75:0.50, the transmittance in the short wavelengths slightly increases and transmittance edge shifts towards shorter wavelength. With an increase in the co-dopant ratio, the reduction and red shifts in the optical transmittance edge are very obvious at all wavelengths. Transmittance values at 550 nm for the films have varied between 79.64% and 50.20%. The indirect and direct band gap values for WFTO-1, WFTO-2, WFTO-3 and WFTO-4 samples were calculated to be 3.73, 3.79, 3.48, 3.40 eV and 4.03, 4.04, 3.98, 3.97 eV, respectively. The crystal structure of the films has been investigated by X-ray diffraction patterns. It has been observed that WFTO-1 and WFTO-2 samples have (111) preferential orientation corresponding to SnO2 cubic phase. This orientation almost disappears and changes to tetragonal phase (110) orientation for WFTO-3 and WFTO-4. To the best of our knowledge, this is the first cubic structure observation for SnO2 grown by the sol–gel technique. The electrical properties were also changed with co-doping ratio. The best optical, electrical and structural properties were obtained for mole ratio 0.75:0.50 (F:W).

Vol. 43
Issue 4
pp. 663-677

1.02 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology