Vol. 45, Issue 4, pp. 535-543

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  2. Optica Applicata Vol. 45, Issue 4, pp. 535-543 (2015)
Vol. 45 Issue 4 pp. 535-543

Electroluminescence of InGaN/GaN heterostructures at the reverse bias and nitrogen temperature

Vitaly Veleschuk, Alexander Vlasenko, Maxim Kisselyuk, Zoya Vlasenko, Denis Khmil’, Vladimir Borshch

Keywords

electroluminescence at reverse bias, InGaN/GaN heterostructures, defect

Abstract

The electroluminescence spectra at reverse biases in LED InGaN/GaN heterostructures at liquid nitrogen temperatures were studied. At the reverse bias and T = 77 K, avalanche microplasmas breakdowns were observed. Electroluminescence spectra demonstrate two peaks caused by the recombination of carriers in different parts of the structure (quantum well and p-GaN layer). The temperature narrowing the half-width and the shift of electroluminescence spectra peaks inherent to microplasmas were observed.

Vol. 45
Issue 4
pp. 535-543

0.34 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology