Vol. 50, Issue 2, pp. 301-310

Vol. 50 Issue 2 pp. 301-310

Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics

Patrycja Śpiewak, Michał Wasiak, Robert P. Sarzała


GaN, computer simulations, tunnel junction, VCSEL


This paper presents results of numerical simulations of a nitride semiconductor vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction. The modeled laser is based on a structure created at the University of California in Santa Barbara. The analysis concerns the impact of the position of laser’s active area on the emitted power. Both small detunings from the standing wave anti-node, and positioning of the active area at different anti-nodes are considered.

Vol. 50
Issue 2
Article No: 13
pp. 301-310

0.71 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology