Vol. 50, Issue 2, pp. 323-330

Vol. 50 Issue 2 pp. 323-330

Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

Krzesimir Nowakowski-Szkudlarek, Grzegorz Muziol, Mikolaj Żak, Mateusz Hajdel, Marcin Siekacz, Anna Feduniewicz-Żmuda, Czeslaw Skierbiszewski


gallium nitride, molecular beam epitaxy, contacts


We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 × 1020 cm–3.

Vol. 50
Issue 2
Article No: 15
pp. 323-330

0.45 MB
OPTICA APPLICATA - a quarterly of the Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology